A1296 PDF and Equivalents Search

 a1296.pdf

A1296 PNP silicon APPLICATION Power Amplifier Application, Power Switching Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature TJ 15... See More ⇒

 2sa1296.pdf

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO... See More ⇒

 2sa1296.pdf

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage VCE(sat) High DC Current Gain G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1296-Y 2SA1296-GR Millimeter REF. B Min. Max. ... See More ⇒

 kta1296.pdf

SEMICONDUCTOR KTA1296 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B C FEATURES Low Saturation Voltage. VCE(sat)=-0.5V(Max.) at IC=-2A N DIM MILLIMETERS Complementary to KTC3266. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARAC... See More ⇒