A1313 Todos los transistores

A1313 APPLICATION Audio Frequency Low Power Amplifier Applications PNP silicon MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA 1 Collector Power Dissipation PC 200 mW 2 Junction Temperature TJ 150 Storag

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1313 TRANSISTOR (PNP) FEATURES Excellent hFE Linearity hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage VCEO=-50V(Min) 1. BASE Complements to the 2SC3325. 2. EMITTER 3. COLLECTOR MARKING ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

2SA1313 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Excellent hFE Linearity 2.80 1.60 hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90 MARKING ACO,ACY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

SMD Type or SMD Type TransistICs PNP Transistors 2SA1313 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage VCEO = -50 V (min) 1 2 Small package +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-e