A1313 APPLICATION: Audio Frequency Low Power Amplifier Applications PNP silicon MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -500 mA1Collector Power Dissipation PC 200 mW2Junction Temperature TJ 150Storag

2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1313 Audio Frequency Low Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at VCE = -6 V, IC = -400 mA High voltage: VCEO = -50 V (min) Complementary to 2SC3325 Small package Absolute Maximum Rat

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1313 TRANSISTOR (PNP)FEATURES Excellent hFE Linearity: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min)1. BASE Complements to the 2SC3325.2. EMITTER3. COLLECTORMARKING : ACO,ACY MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Valu

2SA1313 SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.923. COLLECTOR 0.351.17Features Excellent hFE Linearity 2.80 1.60: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. High Voltage :VCEO=-50V(Min) 0.15 Complements the 2SC3325. 1.90MARKING : ACO,ACY Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

SMD Type orSMD Type TransistICsPNP Transistors2SA1313SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh voltage: VCEO = -50 V (min)1 2Small package+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SC3325 +0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -50 VCollector-e