A1357 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A1357
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 170 MHz
Capacitancia de salida (Cc): 62 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar A1357
A1357 Datasheet (PDF)
a1357.pdf
A1357 PNP silicon APPLICATION: Audio Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -35 VCollector-emitter voltageVCEO -20 VEmitter-base voltage VEBO -8 VTO-12611. Emitter 2.Collector 3.BaseCollector currentIC -5 APeak Collector currentICM -8 AEmitter
csa1357.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTOR CSA1357TO-126 Plastic PackageECBStrobe Flash and Audio Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL Value UNITVCBOCollector Base Voltage 35 VCollector Emitter Voltage VCEO 20 VEmitter Base Voltage VEBO 8.
2sa1357 3ca1357.pdf
2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash applications, audio power amplifier applications. I V C CE(sat)Features: High I ,low V . CCE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO
2sa1357.pdf
isc Silicon PNP Power Transistor 2SA1357DESCRIPTIONHigh Collector Current-I = -5.0ACDC Current Gain-: h = 70(Min)@I = -4AFE CLow Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA2205 | AFY18VI | MJE42A | FX5131 | 2SA1967
History: 2SA2205 | AFY18VI | MJE42A | FX5131 | 2SA1967
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050