All Transistors. A1357 Datasheet

 

A1357 Datasheet and Replacement


   Type Designator: A1357
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 170 MHz
   Collector Capacitance (Cc): 62 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO126
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A1357 Datasheet (PDF)

 ..1. Size:373K  fgx
 a1357.pdf pdf_icon

A1357

A1357 PNP silicon APPLICATION: Audio Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -35 VCollector-emitter voltageVCEO -20 VEmitter-base voltage VEBO -8 VTO-12611. Emitter 2.Collector 3.BaseCollector currentIC -5 APeak Collector currentICM -8 AEmitter

 0.1. Size:176K  toshiba
 2sa1357.pdf pdf_icon

A1357

 0.2. Size:76K  cdil
 csa1357.pdf pdf_icon

A1357

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTOR CSA1357TO-126 Plastic PackageECBStrobe Flash and Audio Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL Value UNITVCBOCollector Base Voltage 35 VCollector Emitter Voltage VCEO 20 VEmitter Base Voltage VEBO 8.

 0.3. Size:251K  lzg
 2sa1357 3ca1357.pdf pdf_icon

A1357

2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash applications, audio power amplifier applications. I V C CE(sat)Features: High I ,low V . CCE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO

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History: GN4F4M | 2SC2758U14 | BD612 | MPS835 | KST5550 | KSA1203O | BLX20

Keywords - A1357 transistor datasheet

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