APT27HZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT27HZ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 6

Encapsulados: TO92

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APT27HZ datasheet

 ..1. Size:340K  bcdsemi
 apt27hz.pdf pdf_icon

APT27HZ

Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27H General Description Features The APT27H series are high voltage, high speed High Switching Speed switching NPN power transistor specially designed for High Collector-Emitter Voltage off-line switch mode power supplies with low output Low Cost power. Applications The APT27H is available in TO-92 package. Battery Chargers for

 9.1. Size:313K  diodes
 apt27z.pdf pdf_icon

APT27HZ

A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case TO92 BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals Matte Tin Finish; Solderable per MIL-S

 9.2. Size:249K  microsemi
 apt27ga90bd15.pdf pdf_icon

APT27HZ

APT27GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 9.3. Size:258K  microsemi
 apt27ga90sd15.pdf pdf_icon

APT27HZ

APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C

MOSTRAR MÁS

Otros transistores... APT13005DTF, APT13005SI, APT13005STF, APT13005SU, APT13005T, APT13005TF, APT17N, APT17Z, BD335, APT27Z, PN100A, 2SB1443, 2SC5856, 3DD5036, H669A, H9014, MN2488