APT27HZ Datasheet PDF and Equivalents Search

 ..1. Size:340K  bcdsemi

 apt27hz.pdf

Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT27H General Description Features The APT27H series are high voltage, high speed High Switching Speed switching NPN power transistor specially designed for High Collector-Emitter Voltage off-line switch mode power supplies with low output Low Cost power. Applications The APT27H is available in TO-92 package. Battery Chargers for... See More ⇒

 9.1. Size:313K  diodes

 apt27z.pdf

A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case TO92 BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals Matte Tin Finish; Solderable per MIL-S... See More ⇒

 9.2. Size:249K  microsemi

 apt27ga90bd15.pdf

APT27GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent... See More ⇒

 9.3. Size:258K  microsemi

 apt27ga90sd15.pdf

APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C... See More ⇒

 9.4. Size:118K  microsemi

 apt27ga90k.pdf

APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220 through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90K VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle... See More ⇒