Биполярный транзистор APT27HZ - описание производителя. Основные параметры. Даташиты.
Наименование производителя: APT27HZ
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 6
Корпус транзистора: TO92
APT27HZ Datasheet (PDF)
apt27hz.pdf
Data SheetHIGH VOLTAGE NPN TRANSISTOR APT27HGeneral Description FeaturesThe APT27H series are high voltage, high speed High Switching Speedswitching NPN power transistor specially designed for High Collector-Emitter Voltageoff-line switch mode power supplies with low output Low Costpower. ApplicationsThe APT27H is available in TO-92 package. Battery Chargers for
apt27z.pdf
A Product Line ofDiodes IncorporatedGreenAPT27450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO92 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per MIL-S
apt27ga90bd15.pdf
APT27GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
apt27ga90sd15.pdf
APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C
apt27ga90k.pdf
APT27GA90K 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS