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HBD435 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HBD435
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO220
 

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HBD435 Datasheet (PDF)

 ..1. Size:144K  shantou-huashan
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HBD435

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD435 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation

 9.1. Size:41K  hsmc
hbd438t.pdf pdf_icon

HBD435

Spec. No. : HT200206HI-SINCERITYIssued Date : 2001.04.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HBD438TCOMPLEMENTARY SILICON POWER TRANSISTORSDescriptionThe HBD438T is silison epitaxial-base PNP power transistor in TO-126 plasticpackage, intented for use in medium power linear and switching applications. Thecomplementary NPN type is HBD437T.TO-126A

 9.2. Size:43K  hsmc
hbd437t.pdf pdf_icon

HBD435

Spec. No. : HT200201HI-SINCERITYIssued Date : 2001.04.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HBD437TCOMPLEMENTARY SILICON POWER TRANSISTORSDescriptionThe HBD437T is silison epitaxial-base NPN power transistor in TO-126 plasticpackage, intented for use in medium power linear and switching applications. Thecomplementary PNP type is HBD438T.TO-126A

 9.3. Size:145K  shantou-huashan
hbd436.pdf pdf_icon

HBD435

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD436 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation

Otros transistores... HA940 , HB123D , HB1274 , HB834 , HB857 , HBD195 , HBD196 , HBD241C , 13007 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C , HBU3150A , HBU406 , HBU406H .

History: 2SD2123

 

 
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