HBD435 Specs and Replacement
Type Designator: HBD435
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO220
HBD435 Substitution
- BJT ⓘ Cross-Reference Search
HBD435 datasheet
Spec. No. HT200206 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/4 HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. TO-126 A... See More ⇒
Spec. No. HT200201 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2005.12.02 MICROELECTRONICS CORP. Page No. 1/4 HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438T. TO-126 A... See More ⇒
Detailed specifications: HA940 , HB123D , HB1274 , HB834 , HB857 , HBD195 , HBD196 , HBD241C , C5198 , HBD436 , HBD681 , HBD682 , HBDW93C , HBDW94C , HBU3150A , HBU406 , HBU406H .
History: HC2344
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