H1008 Todos los transistores

 ..1. Size:143K  shantou-huashan
 h1008.pdf

 0.1. Size:654K  jiejie micro
 jmsh1008pg.pdf

JMSH1008PG 100V 6.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 80 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.5 Pb-free Lead Plating

 0.2. Size:1077K  jiejie micro
 jmsh1008pc jmsh1008pe.pdf

JMSH1008PC JMSH1008PE 100V 6.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 113 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 0.3. Size:1190K  jiejie micro
 jmsh1008pgq.pdf

100V, 90A, 7.4m N-channel Power SGT MOSFET JMSH1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 90 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 0.4. Size:306K  jiejie micro
 jmsh1008agq.pdf

JMSH1008AGQ 100V 6.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 0.5. Size:1068K  jiejie micro
 jmsh1008ac jmsh1008ae.pdf

JMSH1008AC JMSH1008AE 100V 6.8mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% R Tested g ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 6.8 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu

 0.6. Size:350K  jiejie micro
 jmsh1008akq.pdf

JMSH1008AKQ 100V 6.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 92 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 0.7. Size:1194K  jiejie micro
 jmsh1008pk.pdf

100V, 56A, 6.3m N-channel Power SGT MOSFET JMSH1008PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.3 mW Applications Load Switch PWM Application Power Management D G S TO-2

 0.8. Size:290K  jiejie micro
 jmsh1008ag.pdf

JMSH1008AG 100V 6.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 92 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation