All Transistors. H1008 Datasheet

 

H1008 Datasheet, Equivalent, Cross Reference Search


   Type Designator: H1008
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 H1008 Transistor Equivalent Substitute - Cross-Reference Search

   

H1008 Datasheet (PDF)

 ..1. Size:143K  shantou-huashan
 h1008.pdf

H1008 H1008

NPN S I L I C O N T R A N S I S T O Shantou Huashan Electronic Devices Co.,Ltd. H1008 ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation800mW1EmitterE VCBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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