H1008 Specs and Replacement
Type Designator: H1008
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
H1008 Substitution
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H1008 datasheet
JMSH1008PG 100V 6.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 80 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.5 Pb-free Lead Plating... See More ⇒
JMSH1008PC JMSH1008PE 100V 6.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 113 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS... See More ⇒
100V, 90A, 7.4m N-channel Power SGT MOSFET JMSH1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 90 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat... See More ⇒
Detailed specifications: HSBD436, HSBD437, HSBD438, HSBD439, HSBD440, HSBD441, HSBD442, HSC2621, C1815, H1015, H1020, H1020S, H1068, H1116, H1246, H1266, H1268
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