H2369 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H2369
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4.5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar H2369
H2369 Datasheet (PDF)
h2369.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2369 APPLICATIONS This device is designed for high speed saturated switching at collector currents of mA to 100mA ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature
ph2369.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186PH2369NPN switching transistorProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 27NXP Semiconductors Product data sheetNPN switching transistor PH2369FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS3 collector High-speed switc
ph2369 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PH2369NPN switching transistor1999 Apr 27Product specificationSupersedes data of 1997 May 27Philips Semiconductors Product specificationNPN switching transistor PH2369FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS3 collector High-spe
kth2369 a.pdf
SEMICONDUCTOR KTH2369/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION.B CFEATURESHigh Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).Excellent Switching Characteristics.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UN
ph2369.pdf
PH2369TO-92 Transistor (NPN)TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current Continuous 0.2 A Dimensions in inches and (millimeters)PC Collector
hph2369.pdf
Spec. No. : HE6133HI-SINCERITYIssued Date : 1993.06.18Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/5HPH2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HPH2369 is designed for general purpose switching and amplifierapplications.TO-92Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximum T
ph2369m.pdf
PH2369M(BR3DG2369M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, low voltage. / Applications High-speed switching. / Equivalent Circuit / Pinning 3 2
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
