All Transistors. H2369 Datasheet

 

H2369 Datasheet, Equivalent, Cross Reference Search


   Type Designator: H2369
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4.5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 H2369 Transistor Equivalent Substitute - Cross-Reference Search

   

H2369 Datasheet (PDF)

 ..1. Size:260K  shantou-huashan
h2369.pdf

H2369

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2369 APPLICATIONS This device is designed for high speed saturated switching at collector currents of mA to 100mA ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature

 0.1. Size:116K  philips
ph2369.pdf

H2369
H2369

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186PH2369NPN switching transistorProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 27NXP Semiconductors Product data sheetNPN switching transistor PH2369FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS3 collector High-speed switc

 0.2. Size:51K  philips
ph2369 3.pdf

H2369
H2369

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PH2369NPN switching transistor1999 Apr 27Product specificationSupersedes data of 1997 May 27Philips Semiconductors Product specificationNPN switching transistor PH2369FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIONS3 collector High-spe

 0.3. Size:393K  kec
kth2369 a.pdf

H2369
H2369

SEMICONDUCTOR KTH2369/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH SPEED SWITCHING APPLICATION.B CFEATURESHigh Frequency Characteristics : fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).Excellent Switching Characteristics.N DIM MILLIMETERSA 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UN

 0.4. Size:219K  lge
ph2369.pdf

H2369
H2369

PH2369TO-92 Transistor (NPN)TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current Continuous 0.2 A Dimensions in inches and (millimeters)PC Collector

 0.5. Size:57K  hsmc
hph2369.pdf

H2369
H2369

Spec. No. : HE6133HI-SINCERITYIssued Date : 1993.06.18Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/5HPH2369NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HPH2369 is designed for general purpose switching and amplifierapplications.TO-92Features Low Collector Saturation Voltage High speed switching TransistorAbsolute Maximum Ratings Maximum T

 0.6. Size:766K  blue-rocket-elect
ph2369m.pdf

H2369
H2369

PH2369M(BR3DG2369M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, low voltage. / Applications High-speed switching. / Equivalent Circuit / Pinning 3 2

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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