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SBC847BWT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBC847BWT1G
   Código: 1F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT323
 

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SBC847BWT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
sbc847bwt1g.pdf pdf_icon

SBC847BWT1G

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 7.1. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BWT1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 7.2. Size:123K  onsemi
sbc847blt1g.pdf pdf_icon

SBC847BWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT

 7.3. Size:114K  onsemi
sbc847bpdxv6t1g.pdf pdf_icon

SBC847BWT1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

Otros transistores... SBC846BWT1G , SBC847AWT1G , SBC847BDW1T1G , SBC847BDW1T3G , SBC847BLT1G , SBC847BPDW1T1G , SBC847BPDW1T3G , SBC847BPDXV6T1G , S8550 , SBC847CDW1T1G , SBC847CDXV6T1G , SBC847CLT1G , SBC847CWT1G , SBC847CWT3G , SBC848BLT1G , SBC856ALT1G , SBC856BDW1T1G .

History: CSA1267Y | BFY45 | 2N1146A | BC349 | DTS3704B | 2SC395A | SFT250

 

 
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