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SBC847BWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBC847BWT1G
   Código: 1F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT323
 

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SBC847BWT1G datasheet

 ..1. Size:109K  onsemi
sbc847bwt1g.pdf pdf_icon

SBC847BWT1G

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

 7.1. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BWT1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

 7.2. Size:123K  onsemi
sbc847blt1g.pdf pdf_icon

SBC847BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon SBC847BLT1G Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V 3 We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit SOT 23 Collector Emitter Voltage VCEO 45 Vdc 3 COLLECT

 7.3. Size:114K  onsemi
sbc847bpdxv6t1g.pdf pdf_icon

SBC847BWT1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

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History: FTA1036K

 

 

 


 
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