SBC847BWT1G Specs and Replacement

Type Designator: SBC847BWT1G

SMD Transistor Code: 1F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT323

 SBC847BWT1G Substitution

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SBC847BWT1G datasheet

 ..1. Size:109K  onsemi

sbc847bwt1g.pdf pdf_icon

SBC847BWT1G

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC... See More ⇒

 7.1. Size:110K  onsemi

bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BWT1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif... See More ⇒

 7.2. Size:123K  onsemi

sbc847blt1g.pdf pdf_icon

SBC847BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon SBC847BLT1G Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V 3 We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit SOT 23 Collector Emitter Voltage VCEO 45 Vdc 3 COLLECT... See More ⇒

 7.3. Size:114K  onsemi

sbc847bpdxv6t1g.pdf pdf_icon

SBC847BWT1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif... See More ⇒

Detailed specifications: SBC846BWT1G, SBC847AWT1G, SBC847BDW1T1G, SBC847BDW1T3G, SBC847BLT1G, SBC847BPDW1T1G, SBC847BPDW1T3G, SBC847BPDXV6T1G, B772, SBC847CDW1T1G, SBC847CDXV6T1G, SBC847CLT1G, SBC847CWT1G, SBC847CWT3G, SBC848BLT1G, SBC856ALT1G, SBC856BDW1T1G

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