Справочник транзисторов. SBC847BWT1G

 

Биполярный транзистор SBC847BWT1G Даташит. Аналоги


   Наименование производителя: SBC847BWT1G
   Маркировка: 1F
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT323
 

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SBC847BWT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
sbc847bwt1g.pdfpdf_icon

SBC847BWT1G

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 7.1. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdfpdf_icon

SBC847BWT1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 7.2. Size:123K  onsemi
sbc847blt1g.pdfpdf_icon

SBC847BWT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconSBC847BLT1G Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V3 We declare that the material of product compliance with RoHS requirements.1MAXIMUM RATINGS2Rating Symbol Value UnitSOT23CollectorEmitter Voltage VCEO 45 Vdc3COLLECT

 7.3. Size:114K  onsemi
sbc847bpdxv6t1g.pdfpdf_icon

SBC847BWT1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

Другие транзисторы... SBC846BWT1G , SBC847AWT1G , SBC847BDW1T1G , SBC847BDW1T3G , SBC847BLT1G , SBC847BPDW1T1G , SBC847BPDW1T3G , SBC847BPDXV6T1G , S8550 , SBC847CDW1T1G , SBC847CDXV6T1G , SBC847CLT1G , SBC847CWT1G , SBC847CWT3G , SBC848BLT1G , SBC856ALT1G , SBC856BDW1T1G .

 

 
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