SBCW30LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SBCW30LT1G
Código: C2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23
W
Tensión colector-base (Vcb): 32
V
Tensión colector-emisor (Vce): 32
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7
pF
Ganancia de corriente contínua (hfe): 215
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar SBCW30LT1G
SBCW30LT1G
Datasheet (PDF)
..1. Size:300K onsemi
bcw30lt1g sbcw30lt1g.pdf
ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
..2. Size:154K onsemi
sbcw30lt1g.pdf
BCW30LT1G, SBCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318-08STYLE 6COLLECTORMAXIMUM RATINGS3Ratin
8.1. Size:43K fairchild semi
fsbcw30.pdf
Discrete POWER & SignalTechnologiesFSBCW30CEBSuperSOTTM-3PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter
9.1. Size:281K onsemi
bcw33lt1g sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC
9.2. Size:144K onsemi
sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U
Otros transistores... 2SA1771
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