SBCW30LT1G Specs and Replacement
Type Designator: SBCW30LT1G
SMD Transistor Code: C2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 215
Package: SOT23
SBCW30LT1G Substitution
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SBCW30LT1G datasheet
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BCW30LT1G, SBCW30LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318-08 STYLE 6 COLLECTOR MAXIMUM RATINGS 3 Ratin... See More ⇒
Discrete POWER & Signal Technologies FSBCW30 C E B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter ... See More ⇒
BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value Unit C... See More ⇒
Detailed specifications: SBCP53-16T1G, SBCP53T1G, SBCP56-10T1G, SBCP56-16T1G, SBCP56-16T3G, SBCP56T1G, SBCP56T3G, SBCP68T1G, NJW0281G, SBCW33LT1G, SBCW66GLT1G, SBCW72LT1G, SBCX19LT1G, SBF13007-O, SBF13009-O, SBF720T1G, SBN13001
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