All Transistors. SBCW30LT1G Datasheet

 

SBCW30LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: SBCW30LT1G
   SMD Transistor Code: C2
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 215
   Noise Figure, dB: -
   Package: SOT23

 SBCW30LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

SBCW30LT1G Datasheet (PDF)

 ..1. Size:300K  onsemi
bcw30lt1g sbcw30lt1g.pdf

SBCW30LT1G
SBCW30LT1G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 ..2. Size:154K  onsemi
sbcw30lt1g.pdf

SBCW30LT1G
SBCW30LT1G

BCW30LT1G, SBCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318-08STYLE 6COLLECTORMAXIMUM RATINGS3Ratin

 8.1. Size:43K  fairchild semi
fsbcw30.pdf

SBCW30LT1G
SBCW30LT1G

Discrete POWER & SignalTechnologiesFSBCW30CEBSuperSOTTM-3PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter

 9.1. Size:281K  onsemi
bcw33lt1g sbcw33lt1g.pdf

SBCW30LT1G
SBCW30LT1G

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC

 9.2. Size:144K  onsemi
sbcw33lt1g.pdf

SBCW30LT1G
SBCW30LT1G

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BCY58B

 

 
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