SBCW33LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SBCW33LT1G
Código: D3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 32 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 420
Encapsulados: SOT23
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SBCW33LT1G datasheet
bcw33lt1g sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value Unit C
sbcw33lt1g.pdf
BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U
fsbcw30.pdf
Discrete POWER & Signal Technologies FSBCW30 C E B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter
bcw30lt1g sbcw30lt1g.pdf
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Otros transistores... SBCP53T1G, SBCP56-10T1G, SBCP56-16T1G, SBCP56-16T3G, SBCP56T1G, SBCP56T3G, SBCP68T1G, SBCW30LT1G, D965, SBCW66GLT1G, SBCW72LT1G, SBCX19LT1G, SBF13007-O, SBF13009-O, SBF720T1G, SBN13001, SBN13002
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