All Transistors. SBCW33LT1G Datasheet

 

SBCW33LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: SBCW33LT1G
   SMD Transistor Code: D3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT23

 SBCW33LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

SBCW33LT1G Datasheet (PDF)

 ..1. Size:281K  onsemi
bcw33lt1g sbcw33lt1g.pdf

SBCW33LT1G
SBCW33LT1G

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC

 ..2. Size:144K  onsemi
sbcw33lt1g.pdf

SBCW33LT1G
SBCW33LT1G

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

 9.1. Size:43K  fairchild semi
fsbcw30.pdf

SBCW33LT1G
SBCW33LT1G

Discrete POWER & SignalTechnologiesFSBCW30CEBSuperSOTTM-3PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter

 9.2. Size:300K  onsemi
bcw30lt1g sbcw30lt1g.pdf

SBCW33LT1G
SBCW33LT1G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.3. Size:154K  onsemi
sbcw30lt1g.pdf

SBCW33LT1G
SBCW33LT1G

BCW30LT1G, SBCW30LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318-08STYLE 6COLLECTORMAXIMUM RATINGS3Ratin

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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