2N739 Todos los transistores

 

2N739 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N739
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 125 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 60 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO18
 

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2N739 PDF detailed specifications

 0.1. Size:53K  intersil
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2N739

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even... See More ⇒

 0.2. Size:52K  intersil
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2N739

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t... See More ⇒

 0.3. Size:53K  intersil
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2N739

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev... See More ⇒

 0.4. Size:52K  intersil
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2N739

JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) ... See More ⇒

Otros transistores... 2N734A , 2N735 , 2N735A , 2N736 , 2N736A , 2N736B , 2N738 , 2N738A , 2SA1943 , 3CA200B , 2N740 , 2N740A , 2N741 , 2N741A , 2N742 , 2N742A , 2N743 .

 

 
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