2N739 PDF and Equivalents Search

 

2N739 Specs and Replacement

Type Designator: 2N739

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 125 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

 2N739 Substitution

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2N739 datasheet

 0.1. Size:53K  intersil

jansr2n7398.pdf pdf_icon

2N739

JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even... See More ⇒

 0.2. Size:52K  intersil

jansr2n7396.pdf pdf_icon

2N739

JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t... See More ⇒

 0.3. Size:53K  intersil

jansr2n7395.pdf pdf_icon

2N739

JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev... See More ⇒

 0.4. Size:52K  intersil

jansr2n7399.pdf pdf_icon

2N739

JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) ... See More ⇒

Detailed specifications: 2N734A, 2N735, 2N735A, 2N736, 2N736A, 2N736B, 2N738, 2N738A, 2SA1943, 3CA200B, 2N740, 2N740A, 2N741, 2N741A, 2N742, 2N742A, 2N743

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