SD1135 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1135
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 37 W
Tensión colector-base (Vcb): 36 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 470 MHz
Capacitancia de salida (Cc): 19 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: M122
Búsqueda de reemplazo de SD1135
- Selecciónⓘ de transistores por parámetros
SD1135 datasheet
sd1135.pdf
SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes imp
sd1135.pdf
HG RF POWER TRANSISTOR SD1135 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF com
sd1135-03.pdf
SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .150 MHz .7.5 VOLTS .COMMON EMITTER .P 2.5 W MIN. WITH 11.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1135-03 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF 1. Collector 3. Base communications. It w
2sd1135.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
Otros transistores... SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, SD1134-05, 13007, SD1136, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02, SD1224-10
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sd389 | mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a




