SD1135 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SD1135RF & MICROWAVE TRANSISTORSUHF MOBILE APPLICATIONS.470 MHz.12.5 VOLTS.EFFICIENCY 60%.COMMON EMITTER.P 5.0 W MIN. WITH 8.5 dB GAINOUT =.280 2L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1135 SD1135PIN CONNECTIONDESCRIPTIONThe SD1135 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for UHFcommunications. This device utilizes imp

HG RF POWER TRANSISTORSD1135SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.470 MHz.12.5 VOLTS.EFFICIENCY 60%.COMMON EMITTER.P 5.0 W MIN. WITH 8.5 dB GAINOUT =.280 2L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1135 SD1135PIN CONNECTIONDESCRIPTIONThe SD1135 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for UHFcom

SD1135-03RF & MICROWAVE TRANSISTORSVHF PORTABLE/MOBILE APPLICATIONS.150 MHz.7.5 VOLTS.COMMON EMITTER.P 2.5 W MIN. WITH 11.0 dB GAIN=OUT.280 4LSL (M123)epoxy sealedORDER CODE BRANDINGSD1135-03 1135-3PIN CONNECTIONDESCRIPTIONThe SD1135-03 is a 7.5 V Class C epitaxial siliconNPN planar transistor designed primarily for VHF1. Collector 3. Basecommunications. It w

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

isc Silicon NPN Power Transistor 2SD1135DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 2.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB859Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI