SD1135 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SD1135

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 37 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 470 MHz

Capacitancia de salida (Cc): 19 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: M122

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SD1135 datasheet

 ..1. Size:52K  st
sd1135.pdf pdf_icon

SD1135

SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes imp

 ..2. Size:352K  hgsemi
sd1135.pdf pdf_icon

SD1135

HG RF POWER TRANSISTOR SD1135 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF com

 0.1. Size:68K  st
sd1135-03.pdf pdf_icon

SD1135

SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .150 MHz .7.5 VOLTS .COMMON EMITTER .P 2.5 W MIN. WITH 11.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1135-03 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF 1. Collector 3. Base communications. It w

 0.2. Size:42K  hitachi
2sd1135.pdf pdf_icon

SD1135

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Otros transistores... SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, SD1134-05, 13007, SD1136, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02, SD1224-10