Биполярный транзистор SD1135 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SD1135
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 37 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 470 MHz
Ёмкость коллекторного перехода (Cc): 19 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: M122
SD1135 Datasheet (PDF)
sd1135.pdf
SD1135RF & MICROWAVE TRANSISTORSUHF MOBILE APPLICATIONS.470 MHz.12.5 VOLTS.EFFICIENCY 60%.COMMON EMITTER.P 5.0 W MIN. WITH 8.5 dB GAINOUT =.280 2L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1135 SD1135PIN CONNECTIONDESCRIPTIONThe SD1135 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for UHFcommunications. This device utilizes imp
sd1135.pdf
HG RF POWER TRANSISTORSD1135SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.470 MHz.12.5 VOLTS.EFFICIENCY 60%.COMMON EMITTER.P 5.0 W MIN. WITH 8.5 dB GAINOUT =.280 2L STUD (M122)epoxy sealedORDER CODE BRANDINGSD1135 SD1135PIN CONNECTIONDESCRIPTIONThe SD1135 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for UHFcom
sd1135-03.pdf
SD1135-03RF & MICROWAVE TRANSISTORSVHF PORTABLE/MOBILE APPLICATIONS.150 MHz.7.5 VOLTS.COMMON EMITTER.P 2.5 W MIN. WITH 11.0 dB GAIN=OUT.280 4LSL (M123)epoxy sealedORDER CODE BRANDINGSD1135-03 1135-3PIN CONNECTIONDESCRIPTIONThe SD1135-03 is a 7.5 V Class C epitaxial siliconNPN planar transistor designed primarily for VHF1. Collector 3. Basecommunications. It w
2sd1135.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sd1135.pdf
isc Silicon NPN Power Transistor 2SD1135DESCRIPTIONCollector Current: I = 4ACLow Collector Saturation Voltage: V = 2.0V(Max)@I = 2ACE(sat) CHigh Collector Power DissipationComplement to Type 2SB859Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXI
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050