SD1135 Specs and Replacement

Type Designator: SD1135

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 37 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 470 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M122

 SD1135 Substitution

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SD1135 datasheet

 ..1. Size:52K  st

 sd1135.pdf pdf_icon

SD1135

SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes imp... See More ⇒

 ..2. Size:352K  hgsemi

 sd1135.pdf pdf_icon

SD1135

HG RF POWER TRANSISTOR SD1135 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF com... See More ⇒

 0.1. Size:68K  st

 sd1135-03.pdf pdf_icon

SD1135

SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .150 MHz .7.5 VOLTS .COMMON EMITTER .P 2.5 W MIN. WITH 11.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1135-03 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF 1. Collector 3. Base communications. It w... See More ⇒

 0.2. Size:42K  hitachi

 2sd1135.pdf pdf_icon

SD1135

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

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Detailed specifications: SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, SD1134-05, 13007, SD1136, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02, SD1224-10

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