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SD1275 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SD1275
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 160 MHz
   Capacitancia de salida (Cc): 95 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT120
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SD1275 Datasheet (PDF)

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sd1275.pdf pdf_icon

SD1275

SD1275RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9 dB GAINDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1275 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to w

 ..2. Size:269K  hgsemi
sd1275.pdf pdf_icon

SD1275

HG RF POWER TRANSISTORSD1275SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 40 W MIN. WITH 9.0 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1275 SD1275PIN CONNECTIONDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The

 0.1. Size:80K  st
sd1275-01.pdf pdf_icon

SD1275

SD1275-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9.0 dB GAINDESCRIPTIONThe SD1275-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1275-01 utilizes an.380 4L FL (M113)emitter ballasted die ge

 0.2. Size:62K  panasonic
2sd1275.pdf pdf_icon

SD1275

Power Transistors2SD1275, 2SD1275ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.2Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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