SD1275 Datasheet, Equivalent, Cross Reference Search
Type Designator: SD1275
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT120
SD1275 Transistor Equivalent Substitute - Cross-Reference Search
SD1275 Datasheet (PDF)
sd1275.pdf
SD1275RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9 dB GAINDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1275 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to w
sd1275.pdf
HG RF POWER TRANSISTORSD1275SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 40 W MIN. WITH 9.0 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1275 SD1275PIN CONNECTIONDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The
sd1275-01.pdf
SD1275-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9.0 dB GAINDESCRIPTIONThe SD1275-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1275-01 utilizes an.380 4L FL (M113)emitter ballasted die ge
2sd1275.pdf
Power Transistors2SD1275, 2SD1275ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.2Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute
2sd1275 2sd1275a.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949,2SB949A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MA
2sd1275 2sd1275a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
