SD1407 Todos los transistores

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 sd1407.pdf

SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .30 MHz .28 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .P 125 W MIN. WITH 15 dB GAIN = OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1407 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communica- tions. This device utilizes state-

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 sd1407.pdf

HG RF POWER TRANSISTOR SD1407 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .30 MHz .28 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .POUT 125 W MIN. WITH 15 dB GAIN = .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1407 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communi

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 2sd1407a.pdf

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Col

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 2sd1407.pdf

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 2sd1407.pdf

isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T