SD1407 Datasheet and Replacement

SD1407RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.28 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 125 W MIN. WITH 15 dB GAIN=OUT.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1407 1407PIN CONNECTIONDESCRIPTIONThe SD1407 is a 28 V epitaxial silicon NPN planartransistor designed primarily for SSB communica-tions. This device utilizes state-

HG RF POWER TRANSISTORSD1407SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.28 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.POUT 125 W MIN. WITH 15 dB GAIN=.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1407 1407PIN CONNECTIONDESCRIPTIONThe SD1407 is a 28 V epitaxial silicon NPN planartransistor designed primarily for SSB communi

2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCol

2SD1407 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

isc Silicon NPN Power Transistor 2SD1407DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB1016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T