MRF10350
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF10350
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1590
W
Tensión colector-base (Vcb): 65
V
Tensión colector-emisor (Vce): 65
V
Tensión emisor-base (Veb): 3.5
V
Corriente del colector DC máxima (Ic): 31
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: 335E-01
Búsqueda de reemplazo de transistor bipolar MRF10350
MRF10350
Datasheet (PDF)
..1. Size:101K motorola
mrf10350.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10350/DThe RF LineMicrowave PulseMRF10350Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 350 Watts Peak350 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)10251150 MHzMICROWAVE
..2. Size:183K macom
mrf10350.pdf
MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load
7.1. Size:100K motorola
mrf1035mbrev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
7.2. Size:113K motorola
mrf1035m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum
7.3. Size:100K motorola
mrf1035mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC
7.4. Size:113K motorola
mrf1035ma mrf1035mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum
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