All Transistors. MRF10350 Datasheet

 

MRF10350 Datasheet and Replacement


   Type Designator: MRF10350
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1590 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 31 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 335E-01
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MRF10350 Datasheet (PDF)

 ..1. Size:101K  motorola
 mrf10350.pdf pdf_icon

MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10350/DThe RF LineMicrowave PulseMRF10350Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 350 Watts Peak350 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)10251150 MHzMICROWAVE

 ..2. Size:183K  macom
 mrf10350.pdf pdf_icon

MRF10350

MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load

 7.1. Size:100K  motorola
 mrf1035mbrev0.pdf pdf_icon

MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

 7.2. Size:113K  motorola
 mrf1035m.pdf pdf_icon

MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum

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History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | HSE3003

Keywords - MRF10350 transistor datasheet

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