Справочник транзисторов. MRF10350

 

Биполярный транзистор MRF10350 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MRF10350
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1590 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 65 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3.5 V
   Макcимальный постоянный ток коллектора (Ic): 31 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1100 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: 335E-01

 Аналоги (замена) для MRF10350

 

 

MRF10350 Datasheet (PDF)

 ..1. Size:101K  motorola
mrf10350.pdf

MRF10350
MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10350/DThe RF LineMicrowave PulseMRF10350Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 350 Watts Peak350 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)10251150 MHzMICROWAVE

 ..2. Size:183K  macom
mrf10350.pdf

MRF10350
MRF10350

MRF10350 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 350W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load

 7.1. Size:100K  motorola
mrf1035mbrev0.pdf

MRF10350
MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

 7.2. Size:113K  motorola
mrf1035m.pdf

MRF10350
MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum

 7.3. Size:100K  motorola
mrf1035mb.pdf

MRF10350
MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MB/DThe RF LineMicrowave PulseMRF1035MBPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum Gain = 10 dBMIC

 7.4. Size:113K  motorola
mrf1035ma mrf1035mb.pdf

MRF10350
MRF10350

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1035MA/DThe RF LineMicrowave PulseMRF1035MAPower TransistorsMRF1035MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 35 Watts Peak35 W (PEAK), 9601215 MHzMinimum

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