MRF1150MA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF1150MA  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 583 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1100 MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: 332-04

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MRF1150MA datasheet

 ..1. Size:128K  motorola
mrf1150ma mrf1150mb.pdf pdf_icon

MRF1150MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA

 ..2. Size:104K  motorola
mrf1150ma.pdf pdf_icon

MRF1150MA

 ..3. Size:255K  hgsemi
mrf1150ma.pdf pdf_icon

MRF1150MA

HG RF POWER TRANSISTOR MRF1150MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry St

 0.1. Size:128K  motorola
mrf1150marev8.pdf pdf_icon

MRF1150MA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA

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