MRF1150MA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA

HG RF POWER TRANSISTOR MRF1150MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry St

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA

HG RF POWER TRANSISTOR MRF1150MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry St