MRF1150MA Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MRF1150MA Datasheet. Specs and Replacement

Type Designator: MRF1150MA 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 583 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1100 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: 332-04

MRF1150MA Substitution

- BJT ⓘ Cross-Reference Search

MRF1150MA datasheet

..1. Size:128K motorola

mrf1150ma mrf1150mb.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA... See More ⇒

..2. Size:104K motorola

mrf1150ma.pdf pdf_icon

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..3. Size:255K hgsemi

mrf1150ma.pdf pdf_icon

HG RF POWER TRANSISTOR MRF1150MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry St... See More ⇒

0.1. Size:128K motorola

mrf1150marev8.pdf pdf_icon