MRF1946A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1946A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 36
V
Tensión colector-emisor (Vce): 16
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 75
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: 145A-09
Búsqueda de reemplazo de transistor bipolar MRF1946A
MRF1946A
Datasheet (PDF)
..1. Size:141K motorola
mrf1946 mrf1946a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB
..2. Size:243K hgsemi
mrf1946a.pdf
HG RF POWER TRANSISTORMRF1946ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor B
7.1. Size:141K motorola
mrf1946r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB
7.2. Size:242K hgsemi
mrf1946.pdf
HG RF POWER TRANSISTORMRF1946SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor Ba
Otros transistores... 2SA1771
, 2SA178
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, 2SA1800Y
.