MRF1946A Todos los transistores

 

MRF1946A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF1946A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 16 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 75 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: 145A-09

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MRF1946A datasheet

 ..1. Size:141K  motorola
 mrf1946 mrf1946a.pdf pdf_icon

MRF1946A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line NPN Silicon MRF1946 Power Transistors MRF1946A . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance 30 W, 136 220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB

 ..2. Size:243K  hgsemi
 mrf1946a.pdf pdf_icon

MRF1946A

HG RF POWER TRANSISTOR MRF1946A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% CASE 211 07, STYLE 1 Diffused Emitter Resistor B

 7.1. Size:141K  motorola
 mrf1946r.pdf pdf_icon

MRF1946A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line NPN Silicon MRF1946 Power Transistors MRF1946A . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance 30 W, 136 220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB

 7.2. Size:242K  hgsemi
 mrf1946.pdf pdf_icon

MRF1946A

HG RF POWER TRANSISTOR MRF1946 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% CASE 211 07, STYLE 1 Diffused Emitter Resistor Ba

MOSTRAR MÁS

Otros transistores... MRF10350 , MRF10502 , MRF1090MA , MRF1090MB , MRF1150MA , MRF1150MB , MRF16006 , MRF1946 , 2222A , MRF235 , MRF240 , MRF247 , MRF260 , MRF261 , MRF2628 , MRF264 , MRF314A .

 

 

 

 

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