All Transistors. MRF1946A Datasheet

 

MRF1946A Datasheet and Replacement


   Type Designator: MRF1946A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 75 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: 145A-09
 

 MRF1946A Substitution

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MRF1946A Datasheet (PDF)

 ..1. Size:141K  motorola
 mrf1946 mrf1946a.pdf pdf_icon

MRF1946A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB

 ..2. Size:243K  hgsemi
 mrf1946a.pdf pdf_icon

MRF1946A

HG RF POWER TRANSISTORMRF1946ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor B

 7.1. Size:141K  motorola
 mrf1946r.pdf pdf_icon

MRF1946A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB

 7.2. Size:242K  hgsemi
 mrf1946.pdf pdf_icon

MRF1946A

HG RF POWER TRANSISTORMRF1946SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor Ba

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Datasheet: MRF10350 , MRF10502 , MRF1090MA , MRF1090MB , MRF1150MA , MRF1150MB , MRF16006 , MRF1946 , SS8050 , MRF235 , MRF240 , MRF247 , MRF260 , MRF261 , MRF2628 , MRF264 , MRF314A .

History: 2SC3351 | 2SC829 | MRF1150MA | DSS30101L | 2N3722 | AD-BC857-B | 2SC6090LS

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