MRF1946A Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF1946A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: 145A-09
MRF1946A Transistor Equivalent Substitute - Cross-Reference Search
MRF1946A Datasheet (PDF)
mrf1946 mrf1946a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB
mrf1946a.pdf
HG RF POWER TRANSISTORMRF1946ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor B
mrf1946r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB
mrf1946.pdf
HG RF POWER TRANSISTORMRF1946SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor Ba
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
