MRF392 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF393/D The RF Line NPN Silicon Push-Pull MRF393 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W 100 W, 30 to 500 MHz Typical Gain = 9.5 dB (Class AB);

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF393/D The RF Line NPN Silicon Push-Pull MRF393 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W 100 W, 30 to 500 MHz Typical Gain = 9.5 dB (Class AB);

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF393/D The RF Line NPN Silicon Push-Pull MRF393 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W 100 W, 30 to 500 MHz Typical Gain = 9.5 dB (Class AB);

MRF393 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 100W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 500 MHz characteristics Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Cl