MRF392 Todos los transistores

 

MRF392 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF392
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 270 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 500 MHz
   Capacitancia de salida (Cc): 75 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: 744A-01

 Búsqueda de reemplazo de transistor bipolar MRF392

 

MRF392 Datasheet (PDF)

 ..1. Size:132K  motorola
 mrf392.pdf

MRF392 MRF392

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

 ..2. Size:217K  macom
 mrf392.pdf

MRF392 MRF392

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty

 0.1. Size:132K  motorola
 mrf392re.pdf

MRF392 MRF392

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

 0.2. Size:145K  motorola
 mrf392rev8.pdf

MRF392 MRF392

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

 9.1. Size:118K  motorola
 mrf393rev7.pdf

MRF392 MRF392

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

 9.2. Size:127K  motorola
 mrf393.pdf

MRF392 MRF392

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

 9.3. Size:127K  motorola
 mrf393re.pdf

MRF392 MRF392

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

 9.4. Size:197K  macom
 mrf393.pdf

MRF392 MRF392

MRF393 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 100W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 500 MHz characteristics Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Cl

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