MRF392 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF392
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 270 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 500 MHz
Capacitancia de salida (Cc): 75 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: 744A-01
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MRF392 Datasheet (PDF)
mrf392.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q
mrf392.pdf

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty
mrf392re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q
mrf392rev8.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 40578 | BF253-2 | BFG520-X | MRF321 | HSE3003
History: 40578 | BF253-2 | BFG520-X | MRF321 | HSE3003



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