MRF392 Datasheet and Replacement
Type Designator: MRF392
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 270 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: 744A-01
MRF392 Transistor Equivalent Substitute - Cross-Reference Search
MRF392 Datasheet (PDF)
mrf392.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒
mrf392.pdf
MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty... See More ⇒
mrf392re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒
mrf392rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒
Datasheet: MRF247 , MRF260 , MRF261 , MRF2628 , MRF264 , MRF314A , MRF315A , MRF329 , 2SD669 , MRF393 , MRF410 , MRF412 , MRF427A , MRF429 , MRF448 , MRF449A , MRF450A .
History: MRF466 | L9012SLT3G | L9012 | KTC3199-Y | RN2972HFE | CD9011D | BFQ88B
Keywords - MRF392 transistor datasheet
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History: MRF466 | L9012SLT3G | L9012 | KTC3199-Y | RN2972HFE | CD9011D | BFQ88B
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