All Transistors. MRF392 Datasheet

 

MRF392 Datasheet and Replacement


   Type Designator: MRF392
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 270 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 75 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: 744A-01

 MRF392 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF392 Datasheet (PDF)

 ..1. Size:132K  motorola
mrf392.pdf pdf_icon

MRF392

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒

 ..2. Size:217K  macom
mrf392.pdf pdf_icon

MRF392

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty... See More ⇒

 0.1. Size:132K  motorola
mrf392re.pdf pdf_icon

MRF392

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒

 0.2. Size:145K  motorola
mrf392rev8.pdf pdf_icon

MRF392

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒

Datasheet: MRF247 , MRF260 , MRF261 , MRF2628 , MRF264 , MRF314A , MRF315A , MRF329 , 2SD669 , MRF393 , MRF410 , MRF412 , MRF427A , MRF429 , MRF448 , MRF449A , MRF450A .

History: MRF466 | L9012SLT3G | L9012 | KTC3199-Y | RN2972HFE | CD9011D | BFQ88B

Keywords - MRF392 transistor datasheet

 MRF392 cross reference
 MRF392 equivalent finder
 MRF392 lookup
 MRF392 substitution
 MRF392 replacement

 

 
Back to Top

 


 
.