MRF392 Datasheet. Specs and Replacement

Type Designator: MRF392  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 270 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 150 Β°C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 75 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: 744A-01

 MRF392 Substitution

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MRF392 datasheet

 ..1. Size:132K  motorola

mrf392.pdf pdf_icon

MRF392

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒

 ..2. Size:217K  macom

mrf392.pdf pdf_icon

MRF392

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty... See More ⇒

 0.1. Size:132K  motorola

mrf392re.pdf pdf_icon

MRF392

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒

 0.2. Size:145K  motorola

mrf392rev8.pdf pdf_icon

MRF392

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q ... See More ⇒

Detailed specifications: MRF247, MRF260, MRF261, MRF2628, MRF264, MRF314A, MRF315A, MRF329, 2SD669, MRF393, MRF410, MRF412, MRF427A, MRF429, MRF448, MRF449A, MRF450A

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