MRF393 Datasheet. Equivalente

 ..1. Size:127K  motorola
 mrf393.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF393/D The RF Line NPN Silicon Push-Pull MRF393 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W 100 W, 30 to 500 MHz Typical Gain = 9.5 dB (Class AB);

 ..2. Size:197K  macom
 mrf393.pdf

MRF393 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 100W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 500 MHz characteristics Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Cl

 0.1. Size:118K  motorola
 mrf393rev7.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF393/D The RF Line NPN Silicon Push-Pull MRF393 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W 100 W, 30 to 500 MHz Typical Gain = 9.5 dB (Class AB);

 0.2. Size:127K  motorola
 mrf393re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF393/D The RF Line NPN Silicon Push-Pull MRF393 RF Power Transistor . . . designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W 100 W, 30 to 500 MHz Typical Gain = 9.5 dB (Class AB);

 9.1. Size:132K  motorola
 mrf392.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q

 9.2. Size:132K  motorola
 mrf392re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q

 9.3. Size:145K  motorola
 mrf392rev8.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF392/D The RF Line NPN Silicon Push-Pull MRF392 RF Power Transistor Designed primarily for wideband large signal output and driver amplifier stages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W 125 W, 30 to 500 MHz Typical Gain = 10 dB CONTROLLED Q

 9.4. Size:217K  macom
 mrf392.pdf

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband large signal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty