MRF393 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF393
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 270 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: 744A-01
MRF393 Transistor Equivalent Substitute - Cross-Reference Search
MRF393 Datasheet (PDF)
mrf393.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);
mrf393.pdf
MRF393 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 100W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 500 MHz characteristics Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Cl
mrf393rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);
mrf393re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);
mrf392.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q
mrf392re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q
mrf392rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q
mrf392.pdf
MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
