MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

MRF393 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 100W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 500 MHz characteristics Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Cl

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF393/DThe RF LineNPN Silicon Push-PullMRF393RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 500 MHz Characteristics Output Power = 100 W100 W, 30 to 500 MHzTypical Gain = 9.5 dB (Class AB);

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF392/DThe RF LineNPN Silicon Push-PullMRF392RF Power TransistorDesigned primarily for wideband largesignal output and driver amplifierstages in the 30 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 125 W125 W, 30 to 500 MHzTypical Gain = 10 dBCONTROLLED Q

MRF392 The RF Line Controlled Q Broadband Power Transistor M/A-COM Products Released - Rev. 07.07 125W, 30 to 500MHz, 28V Designed primarily for wideband largesignal output and driver amplifier Product Image stages in the 30 to 500 MHz frequency range. Specified 28 V, 400 MHz characteristics Output power = 125 W Typical gain = 10 dB Efficiency = 55% (ty