MRF587 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF587
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 34 V
Tensión colector-emisor (Vce): 17 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5500 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: 244A-01
Búsqueda de reemplazo de transistor bipolar MRF587
MRF587 Datasheet (PDF)
mrf587.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF587/DThe RF LineNPN SiliconMRF587High-Frequency Transistor. . . designed for use in highgain, lownoise, ultralinear, tuned and widebandamplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mANF = 3.0 dB @ 0.5 GHz
mrf587.pdf
HG RF POWER TRANSISTORMRF587SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for use in highgain, lownoise, ultralinear, tuned and widebandamplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA High Power Gain GU(max) = 16.5 dB (Typ) @ f = 500 MHz
mrf587re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF587/DThe RF LineNPN SiliconMRF587High-Frequency Transistor. . . designed for use in highgain, lownoise, ultralinear, tuned and widebandamplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mANF = 3.0 dB @ 0.5 GHz
mrf5811lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology
mrf581re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L
mrf5811l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology
mrf581 mrf581a mrf5812.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF581/DThe RF LineMRF581NPN SiliconMRF581AHigh-Frequency TransistorsMRF5812, R1, R2Designed for high current low power amplifiers up to 1.0 GHz. Low Noise (2.0 dB @ 500 MHz) Low Intermodulation DistortionIC = 200 mA High GainLOW NOISE StateoftheArt TechnologyHIGHFREQUENCYFine L
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
