MRF587 Datasheet. Specs and Replacement

Type Designator: MRF587  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 34 V

Maximum Collector-Emitter Voltage |Vce|: 17 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5500 MHz

Collector Capacitance (Cc): 2.2 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: 244A-01

 MRF587 Substitution

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MRF587 datasheet

 ..1. Size:155K  motorola

mrf587.pdf pdf_icon

MRF587

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF587/D The RF Line NPN Silicon MRF587 High-Frequency Transistor . . . designed for use in high gain, low noise, ultra linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA NF = 3.0 dB @ 0.5 GHz ... See More ⇒

 ..2. Size:291K  hgsemi

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MRF587

HG RF POWER TRANSISTOR MRF587 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for use in high gain, low noise, ultra linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA High Power Gain GU(max) = 16.5 dB (Typ) @ f = 500 MHz ... See More ⇒

 0.1. Size:155K  motorola

mrf587re.pdf pdf_icon

MRF587

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF587/D The RF Line NPN Silicon MRF587 High-Frequency Transistor . . . designed for use in high gain, low noise, ultra linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA NF = 3.0 dB @ 0.5 GHz ... See More ⇒

 9.1. Size:155K  motorola

mrf5811lt1.pdf pdf_icon

MRF587

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5811LT1/D The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISE HIGH FREQUENCY Low Intermodulation Distortion TRANSISTOR High Gain NPN SILICON State of the Art Technology ... See More ⇒

Detailed specifications: MRF492A, MRF497, MRF544, MRF545, MRF555, MRF572, MRF581, MRF581A, BD139, MRF630, MRF650, MRF652, MRF652S, MRF653, MRF654, MRF658, MRF839

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