All Transistors. MRF587 Datasheet

 

MRF587 Datasheet and Replacement


   Type Designator: MRF587
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 34 V
   Maximum Collector-Emitter Voltage |Vce|: 17 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5500 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: 244A-01
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MRF587 Datasheet (PDF)

 ..1. Size:155K  motorola
 mrf587.pdf pdf_icon

MRF587

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF587/DThe RF LineNPN SiliconMRF587High-Frequency Transistor. . . designed for use in highgain, lownoise, ultralinear, tuned and widebandamplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mANF = 3.0 dB @ 0.5 GHz

 ..2. Size:291K  hgsemi
 mrf587.pdf pdf_icon

MRF587

HG RF POWER TRANSISTORMRF587SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for use in highgain, lownoise, ultralinear, tuned and widebandamplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA High Power Gain GU(max) = 16.5 dB (Typ) @ f = 500 MHz

 0.1. Size:155K  motorola
 mrf587re.pdf pdf_icon

MRF587

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF587/DThe RF LineNPN SiliconMRF587High-Frequency Transistor. . . designed for use in highgain, lownoise, ultralinear, tuned and widebandamplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mANF = 3.0 dB @ 0.5 GHz

 9.1. Size:155K  motorola
 mrf5811lt1.pdf pdf_icon

MRF587

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF5811LT1/DThe RF LineMRF5811LT1NPN SiliconHigh-Frequency TransistorDesigned for high current, low power amplifiers up to 1.0 GHz.IC = 200 mA Low Noise (2.0 dB @ 500 MHz) LOW NOISEHIGHFREQUENCY Low Intermodulation DistortionTRANSISTOR High GainNPN SILICON StateoftheArt Technology

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History: RN1112 | SD1274-01 | 2SC3649 | PN750 | 2SC1547 | RN2970CT | CMPT591E

Keywords - MRF587 transistor datasheet

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