MRF653 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF653 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 44 W
Tensión colector-base (Vcb): 38 V
Tensión colector-emisor (Vce): 16.5 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2.75 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 512 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: SOT122
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MRF653 datasheet
..1. Size:123K motorola
mrf653 mrf653s.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency
..2. Size:163K motorola
mrf653.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty
..3. Size:250K hgsemi
mrf653.pdf
HG RF POWER TRANSISTOR MRF653 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life a
0.1. Size:163K motorola
mrf653rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty
0.2. Size:123K motorola
mrf653re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency
9.1. Size:127K motorola
mrf658.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M
9.2. Size:146K motorola
mrf650.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz
9.3. Size:111K motorola
mrf652 mrf652s.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Ef
9.4. Size:105K motorola
mrf654.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency =
9.5. Size:105K motorola
mrf654re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency =
9.6. Size:146K motorola
mrf650re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz
9.7. Size:93K motorola
mrf658rev7.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M
9.8. Size:127K motorola
mrf658re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M
9.9. Size:154K motorola
mrf650rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz
9.10. Size:111K motorola
mrf652re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Ef
9.11. Size:255K hgsemi
mrf658.pdf
HG RF POWER TRANSISTOR MRF658 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% Characterized
9.12. Size:269K hgsemi
mrf650.pdf
HG RF POWER TRANSISTOR MRF650 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB
9.13. Size:234K hgsemi
mrf654.pdf
HG RF POWER TRANSISTOR MRF654 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55% Built In Matching Network for Broadband Operat
9.14. Size:243K hgsemi
mrf652s.pdf
HG RF POWER TRANSISTOR MRF652S Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.
9.15. Size:241K hgsemi
mrf652.pdf
HG RF POWER TRANSISTOR MRF652 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0
Otros transistores... MRF572, MRF581, MRF581A, MRF587, MRF630, MRF650, MRF652, MRF652S, C1815, MRF654, MRF658, MRF839, MRF839F, MRF857S, MRF891, MRF891S, MRF894
