Биполярный транзистор MRF653 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF653
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 44 W
Макcимально допустимое напряжение коллектор-база (Ucb): 38 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 16.5 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 2.75 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 512 MHz
Ёмкость коллекторного перехода (Cc): 22 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: SOT122
MRF653 Datasheet (PDF)
mrf653 mrf653s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
mrf653.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653.pdf
HG RF POWER TRANSISTORMRF653SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 WGain = 8.0 dB (Typ)Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life a
mrf653rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty
mrf653re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency
mrf658.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M
mrf650.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF LineNPN SiliconMRF650RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 Watts50 W, 512 MHzMinimum Gain = 5.2 dB @ 440, 470 MHz
mrf652 mrf652s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF LineNPN SiliconMRF652RF Power TransistorsMRF652SDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 Watts5.0 W, 512 MHzMinimum Gain = 10 dBRF POWEREf
mrf654.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF654/DThe RF LineNPN SiliconMRF654RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 15 W15 W, 470 MHzMinimum Gain = 7.8 dBRF POWEREfficiency =
mrf654re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF654/DThe RF LineNPN SiliconMRF654RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 15 W15 W, 470 MHzMinimum Gain = 7.8 dBRF POWEREfficiency =
mrf650re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF LineNPN SiliconMRF650RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 Watts50 W, 512 MHzMinimum Gain = 5.2 dB @ 440, 470 MHz
mrf658rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M
mrf658re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M
mrf650rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF LineNPN SiliconMRF650RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 Watts50 W, 512 MHzMinimum Gain = 5.2 dB @ 440, 470 MHz
mrf652re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF LineNPN SiliconMRF652RF Power TransistorsMRF652SDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 Watts5.0 W, 512 MHzMinimum Gain = 10 dBRF POWEREf
mrf658.pdf
HG RF POWER TRANSISTORMRF658SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dBMinimum Efficiency = 50% Characterized
mrf650.pdf
HG RF POWER TRANSISTORMRF650SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 WattsMinimum Gain = 5.2 dB @ 440, 470 MHzEfficiency = 55% @ 440, 470 MHzIRL = 10 dB
mrf654.pdf
HG RF POWER TRANSISTORMRF654SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 15 WMinimum Gain = 7.8 dBEfficiency = 55% BuiltIn Matching Network for Broadband Operat
mrf652s.pdf
HG RF POWER TRANSISTORMRF652SSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 WattsMinimum Gain = 10 dBEfficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.
mrf652.pdf
HG RF POWER TRANSISTORMRF652SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 WattsMinimum Gain = 10 dBEfficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0
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Список транзисторов
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