All Transistors. MRF653 Datasheet

 

MRF653 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MRF653
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 44 W
   Maximum Collector-Base Voltage |Vcb|: 38 V
   Maximum Collector-Emitter Voltage |Vce|: 16.5 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 2.75 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 512 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT122

 MRF653 Transistor Equivalent Substitute - Cross-Reference Search

   

MRF653 Datasheet (PDF)

 ..1. Size:123K  motorola
mrf653 mrf653s.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency

 ..2. Size:163K  motorola
mrf653.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty

 ..3. Size:250K  hgsemi
mrf653.pdf

MRF653

HG RF POWER TRANSISTORMRF653SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 WGain = 8.0 dB (Typ)Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life a

 0.1. Size:163K  motorola
mrf653rev8.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency = 65% (Ty

 0.2. Size:123K  motorola
mrf653re.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF653/DThe RF LineNPN SiliconMRF653RF Power TransistorsMRF653SDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 10 W10 W, 512 MHzGain = 8.0 dB (Typ)RF POWEREfficiency

 9.1. Size:127K  motorola
mrf658.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M

 9.2. Size:146K  motorola
mrf650.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF LineNPN SiliconMRF650RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 Watts50 W, 512 MHzMinimum Gain = 5.2 dB @ 440, 470 MHz

 9.3. Size:111K  motorola
mrf652 mrf652s.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF LineNPN SiliconMRF652RF Power TransistorsMRF652SDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 Watts5.0 W, 512 MHzMinimum Gain = 10 dBRF POWEREf

 9.4. Size:105K  motorola
mrf654.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF654/DThe RF LineNPN SiliconMRF654RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 15 W15 W, 470 MHzMinimum Gain = 7.8 dBRF POWEREfficiency =

 9.5. Size:105K  motorola
mrf654re.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF654/DThe RF LineNPN SiliconMRF654RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 15 W15 W, 470 MHzMinimum Gain = 7.8 dBRF POWEREfficiency =

 9.6. Size:146K  motorola
mrf650re.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF LineNPN SiliconMRF650RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 Watts50 W, 512 MHzMinimum Gain = 5.2 dB @ 440, 470 MHz

 9.7. Size:93K  motorola
mrf658rev7.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M

 9.8. Size:127K  motorola
mrf658re.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M

 9.9. Size:154K  motorola
mrf650rev8.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF LineNPN SiliconMRF650RF Power TransistorDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 Watts50 W, 512 MHzMinimum Gain = 5.2 dB @ 440, 470 MHz

 9.10. Size:111K  motorola
mrf652re.pdf

MRF653
MRF653

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF LineNPN SiliconMRF652RF Power TransistorsMRF652SDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 Watts5.0 W, 512 MHzMinimum Gain = 10 dBRF POWEREf

 9.11. Size:255K  hgsemi
mrf658.pdf

MRF653

HG RF POWER TRANSISTORMRF658SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dBMinimum Efficiency = 50% Characterized

 9.12. Size:269K  hgsemi
mrf650.pdf

MRF653

HG RF POWER TRANSISTORMRF650SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt CharacteristicsOutput Power = 50 WattsMinimum Gain = 5.2 dB @ 440, 470 MHzEfficiency = 55% @ 440, 470 MHzIRL = 10 dB

 9.13. Size:234K  hgsemi
mrf654.pdf

MRF653

HG RF POWER TRANSISTORMRF654SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 15 WMinimum Gain = 7.8 dBEfficiency = 55% BuiltIn Matching Network for Broadband Operat

 9.14. Size:243K  hgsemi
mrf652s.pdf

MRF653

HG RF POWER TRANSISTORMRF652SSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 WattsMinimum Gain = 10 dBEfficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.

 9.15. Size:241K  hgsemi
mrf652.pdf

MRF653

HG RF POWER TRANSISTORMRF652SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Vdc UHF largesignal, amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz CharacteristicsOutput Power = 5.0 WattsMinimum Gain = 10 dBEfficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CV7672L-O | K2118A | CXT4033 | 2SD2067

 

 
Back to Top