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MRF658 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF658
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 38 V
   Tensión colector-emisor (Vce): 16.5 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 520 MHz
   Capacitancia de salida (Cc): 170 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: 316-01
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MRF658 Datasheet (PDF)

 ..1. Size:127K  motorola
 mrf658.pdf pdf_icon

MRF658

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M

 ..2. Size:255K  hgsemi
 mrf658.pdf pdf_icon

MRF658

HG RF POWER TRANSISTORMRF658SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dBMinimum Efficiency = 50% Characterized

 0.1. Size:93K  motorola
 mrf658rev7.pdf pdf_icon

MRF658

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M

 0.2. Size:127K  motorola
 mrf658re.pdf pdf_icon

MRF658

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF658/DThe RF LineNPN SiliconMRF658RF Power TransistorDesigned for 12.5 Volt UHF largesignal, common emitter, classC amplifierapplications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz CharacteristicsOutput Power = 65 WattsMinimum Gain = 4.15 dB65 W, 512 M

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD13007MD | SGSIF444 | HC4468 | 2SC4760 | PN4142 | BD154 | TSC114ENND03

 

 
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