MRF658 Datasheet. Specs and Replacement
Type Designator: MRF658 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 38 V
Maximum Collector-Emitter Voltage |Vce|: 16.5 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 520 MHz
Collector Capacitance (Cc): 170 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: 316-01
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MRF658 datasheet
..1. Size:127K motorola
mrf658.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M... See More ⇒
..2. Size:255K hgsemi
mrf658.pdf
HG RF POWER TRANSISTOR MRF658 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% Characterized ... See More ⇒
0.1. Size:93K motorola
mrf658rev7.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M... See More ⇒
0.2. Size:127K motorola
mrf658re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M... See More ⇒
9.1. Size:146K motorola
mrf650.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz ... See More ⇒
9.2. Size:111K motorola
mrf652 mrf652s.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Ef... See More ⇒
9.3. Size:105K motorola
mrf654.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency =... See More ⇒
9.4. Size:105K motorola
mrf654re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency =... See More ⇒
9.5. Size:146K motorola
mrf650re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz ... See More ⇒
9.6. Size:123K motorola
mrf653 mrf653s.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency... See More ⇒
9.7. Size:163K motorola
mrf653.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty... See More ⇒
9.8. Size:154K motorola
mrf650rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz ... See More ⇒
9.9. Size:111K motorola
mrf652re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Ef... See More ⇒
9.10. Size:163K motorola
mrf653rev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty... See More ⇒
9.11. Size:123K motorola
mrf653re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency... See More ⇒
9.12. Size:269K hgsemi
mrf650.pdf
HG RF POWER TRANSISTOR MRF650 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB ... See More ⇒
9.13. Size:234K hgsemi
mrf654.pdf
HG RF POWER TRANSISTOR MRF654 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55% Built In Matching Network for Broadband Operat... See More ⇒
9.14. Size:243K hgsemi
mrf652s.pdf
HG RF POWER TRANSISTOR MRF652S Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.... See More ⇒
9.15. Size:241K hgsemi
mrf652.pdf
HG RF POWER TRANSISTOR MRF652 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0... See More ⇒
9.16. Size:250K hgsemi
mrf653.pdf
HG RF POWER TRANSISTOR MRF653 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life a... See More ⇒
Detailed specifications: MRF581A, MRF587, MRF630, MRF650, MRF652, MRF652S, MRF653, MRF654, 2N3055, MRF839, MRF839F, MRF857S, MRF891, MRF891S, MRF894, MRF897, MRF897R
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