MSD1819A-RT1G Todos los transistores

 

MSD1819A-RT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSD1819A-RT1G
   Código: ZR
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 210
   Paquete / Cubierta: SOT323
 

 Búsqueda de reemplazo de MSD1819A-RT1G

   - Selección ⓘ de transistores por parámetros

 

MSD1819A-RT1G Datasheet (PDF)

 ..1. Size:57K  onsemi
 msd1819a-rt1g nsvmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE

 ..2. Size:100K  onsemi
 msd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

MSD1819A-RT1G,SMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mounthttp://onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYL

 0.1. Size:90K  lrc
 lmsd1819a-rt1g.pdf pdf_icon

MSD1819A-RT1G

LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE

 2.1. Size:209K  onsemi
 msd1819a-rt1-d.pdf pdf_icon

MSD1819A-RT1G

MSD1819A--RT1General Purpose AmplifierTransistorNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalhttp://onsemi.compurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfaceCOLLECTORmount applications.3Features High hFE, 210 -- 460 Low VCE(sat),

MOSTRAR MÁS

Otros transistores... MSB1218A-RT1 , MSB1218A-RT1G , MSB92ASWT1G , MSB92AWT1G , MSB92T1G , MSB92WT1G , MSC2712GT1G , MSD1819A-R , TIP35C , MSD42 , MSD42SWT1G , MSD42T1G , MSD42WT1G , MSD601-R , MSD601-RT1G , MSD602-RT1 , MSD602-RT1G .

History: 2SC3600 | 2SA953 | 2SB633C

 

 
Back to Top

 


 
.