MSD1819A-RT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSD1819A-RT1G
Código: ZR
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 210
Paquete / Cubierta: SOT323
Búsqueda de reemplazo de transistor bipolar MSD1819A-RT1G
MSD1819A-RT1G Datasheet (PDF)
msd1819a-rt1g nsvmsd1819a-rt1g.pdf
MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYLE
msd1819a-rt1g.pdf
MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http //onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYL
lmsd1819a-rt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G S-LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the 3 SC-70/SOT-323 package which is designed for low power surface mount applications. 1 Features 2 High hFE, 210-460 Low VCE
msd1819a-rt1-d.pdf
MSD1819A--RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general http //onsemi.com purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface COLLECTOR mount applications. 3 Features High hFE, 210 -- 460 Low VCE(sat),
Otros transistores... MSB1218A-RT1 , MSB1218A-RT1G , MSB92ASWT1G , MSB92AWT1G , MSB92T1G , MSB92WT1G , MSC2712GT1G , MSD1819A-R , BD335 , MSD42 , MSD42SWT1G , MSD42T1G , MSD42WT1G , MSD601-R , MSD601-RT1G , MSD602-RT1 , MSD602-RT1G .
History: 2N2022 | FJN3301R | 2SD389 | BUT36 | 2SD2182 | DTA044EEB | MS1649
History: 2N2022 | FJN3301R | 2SD389 | BUT36 | 2SD2182 | DTA044EEB | MS1649
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
a1015 transistor | c945 | ac128 transistor | 2n3055 transistor | 2n3904 datasheet | irf3710 | tip3055 | mosfet datasheet






